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Core of our technology:

Our patented & proprietary PHDP-magnetron deposition source is developed in-house from the ground up. The development includes a newly designed pulsed high-density plasma generator with proprietary pulsed output and an advanced retrofittable magnetron deposition source far more superior to any conventional magnetron technology in the market today. Our technology offers high deposition rates (tunable), very high ionization of sputtered materials with high energy ions with the most stable PHDP-discharge ever achieved on a magnetron to date. Our technology is suitable for depositing metal films, metal nitrides, metal oxides and DLC (Me-DLC or a-C:H:Me) & (C-DLC or a-C:H) & ta-C.
This new PHDP-magnetron technology offers the industrial market but not limited to a true alternative to Arc deposition due to its high ionization and high deposition rates producing dense, hard and smooth thin films without any macro particles generation. It also enables the stable HDP-deposition of dense, low stress and high rate DLC (hydrogenated/non-hydrogenated) and dense oxides thin films. All high rate depositions are achieved without any reactive gas control. The result is a game-changing performance which can be configurable, scalable and tunable to any desired process.
DLC ( ta-C & a:C-H) deposition sources:
Producing super dense, smooth and low stress DLC thin films with high hardness ( > 20 GPa) on any substrate.
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Diamond like Carbon
(DLC without Hydrogen)
on Silicon Wafer.

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Diamond like Carbon
(DLC without Hydrogen)
on Silicon Wafer.

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Diamond like Carbon
(DLC with Hydrogen).

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Diamond like Carbon
(DLC without Hydrogen)
on Silicon Wafer.

High Rate Metal Nitrides ( MeN) deposition:
Producing super dense, smooth and low stress metal nitride thin films with rates up to more than 20um/hr static. The deposition rate is tunable to any application, but the super high rate source is designed as an alternative to ARC PVD process for the industrial market.
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Titanium Aluminum Nitride (TiAlN) on Silicon wafer.

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Titanium Aluminum Nitride (TiAlN) on Silicon wafer.

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Titanium Aluminum Nitride (TiAlN) cross section

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Titanium Aluminum Nitride (TiAlN) on Silicon wafer.

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Titanium Nitride (TiN) on Silicon substrate.

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Titanium Nitride (TiN) on Carbide cutting insert.

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Aluminum Nitride

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Titanium Nitride (TiN) on Steel at 26um/hr.

High Rate Metal Oxide (MeO) deposition:
Producing new ceramic based thin film materials on any substrate material and geometry with rates up to 15 µm/hr static.
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Titanium dioxide films on Silicon substrate

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Aluminum Oxide

Highly Ionized Metal (Me) deposition:
Producing super dense, smooth and low stress metal thin films on flat substrates and on 3D geometry features such as vias and trenches on silicon wafers.
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Aluminum Oxide (Al2O3) films on Silicon
substrate at 10µm/hr.

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Titanium (Ti) on Silicon substrate.

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Chromium Nitride (CrN) on Silicon substrate.

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Chromium (Cr) on Silicon substrate.

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Aluminum

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